IRLMS2002TR

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power - Max: 2W
Current - Continuous Drain (Id) @ 25° C: 6.5A
Series: HEXFET®
Packaging: Cut Tape (CT)
Manufacturer: International Rectifier
Package / Case: 6-LSOP (0.063", 1.60mm Width)
Supplier Device Package: Micro6?(TSOP-6)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V
Gate Charge (Qg) @ Vgs: 22nC @ 5V
Input Capacitance (Ciss) @ Vds: 1310pF @ 15V


Parameters:

Technical/Catalog Information	IRLMS2002TR
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	6.5A
Rds On (Max) @ Id, Vgs	30 mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) @ Vds	1310pF @ 15V
Power - Max	2W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	22nC @ 5V
Package / Case	Micro6?(TSOP-6)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRLMS2002TR IRLMS2002TR IRLMS2002CT ND IRLMS2002CTND IRLMS2002CT