Position: Home  > All Categories> Integrated Circuits (ICs) > IRLMS2002PbF

IRLMS2002PbF

Features: Ultra Low On-ResistanceN-Channel MOSFET Surface Mount Available in Tape & Reel 2.5V RatedLead-FreeSpecifications Parameter Max. Units VDS Drain- Source Voltage 20 V ID @ TA = 25 Continuous Drain Current, VGS @ -4.5V 6.5 A ID @ TA= 70 Continuous D...

product image

IRLMS2002PbF Picture
See larger image
SeekIC No. : 004378431 Detail

IRLMS2002PbF: Features: Ultra Low On-ResistanceN-Channel MOSFET Surface Mount Available in Tape & Reel 2.5V RatedLead-FreeSpecifications Parameter Max. Units VDS Drain- Source Voltage 20 ...

IRLMS2002PbF Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRLMS2002PbF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/31

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

Ultra Low On-Resistance
N-Channel MOSFET
Surface Mount
Available in Tape & Reel
2.5V Rated
Lead-Free


Specifications

  Parameter
Max.
Units
VDS Drain- Source Voltage
20
V
ID @ TA = 25 Continuous Drain Current, VGS @ -4.5V
6.5
A
ID @ TA= 70 Continuous Drain Current, VGS @ -4.5V
5.2
IDM Pulsed Drain Current
20
PD @TA = 25 Power Dissipation
2.0
W
PD @TA = 70 Power Dissipation
1.3
  Linear Derating Factor
0.016
mW/
VGS Gate-to-Source Voltage
±8
V
TJ, TSTG Junction and Storage Temperature Range
-55 to +150



Description

These N-Channel MOSFETs from International Rectifier IRLMS2002PbF  utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

The Micro6™ package with its customized leadframe produces a HEXFET® power MOSFET IRLMS2002PbF  with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Circuit Protection
A50QS75-4Y
F-17*77
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Undefined Category
VI-B63-IU
X27 589
Line Protection, Backups
BX0023
A20B-1008-0550
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
View more