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IRLMS2002PbF

Features: Ultra Low On-ResistanceN-Channel MOSFET Surface Mount Available in Tape & Reel 2.5V RatedLead-FreeSpecifications Parameter Max. Units VDS Drain- Source Voltage 20 V ID @ TA = 25 Continuous Drain Current, VGS @ -4.5V 6.5 A ID @ TA= 70 Continuous D...

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SeekIC No. : 004378431 Detail

IRLMS2002PbF: Features: Ultra Low On-ResistanceN-Channel MOSFET Surface Mount Available in Tape & Reel 2.5V RatedLead-FreeSpecifications Parameter Max. Units VDS Drain- Source Voltage 20 ...

IRLMS2002PbF Data Sheet

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Part Number:
IRLMS2002PbF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

Ultra Low On-Resistance
N-Channel MOSFET
Surface Mount
Available in Tape & Reel
2.5V Rated
Lead-Free


Specifications

  Parameter
Max.
Units
VDS Drain- Source Voltage
20
V
ID @ TA = 25 Continuous Drain Current, VGS @ -4.5V
6.5
A
ID @ TA= 70 Continuous Drain Current, VGS @ -4.5V
5.2
IDM Pulsed Drain Current
20
PD @TA = 25 Power Dissipation
2.0
W
PD @TA = 70 Power Dissipation
1.3
  Linear Derating Factor
0.016
mW/
VGS Gate-to-Source Voltage
±8
V
TJ, TSTG Junction and Storage Temperature Range
-55 to +150



Description

These N-Channel MOSFETs from International Rectifier IRLMS2002PbF  utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

The Micro6™ package with its customized leadframe produces a HEXFET® power MOSFET IRLMS2002PbF  with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.




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