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IRLMS2002

Specifications Parameter Max. Units VDS Drain- Source Voltage 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 6.5 ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 5.2 A IDM Pulsed Drain Current 20 PD @TA = 25°C Power Dissipation...

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IRLMS2002: Specifications Parameter Max. Units VDS Drain- Source Voltage 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 6.5 ID @ TA= 70°C Continuous Drain Curren...

IRLMS2002 Data Sheet

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Part Number:
IRLMS2002
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Specifications

  Parameter
Max.
Units
VDS Drain- Source Voltage
20
V
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V
6.5
ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V
5.2
A
IDM Pulsed Drain Current
20
PD @TA = 25°C Power Dissipation
2.0
PD @TA = 70°C Power Dissipation
1.3
W
  Linear Derating Factor
0.016
W/°C
VGS Gate-to-Source Voltage
± 12
V
TJ, TSTG Junction and Storage Temperature Range
-55 to + 150
°C



Description

These N-Channel MOSFETs from International Rectifier IRLMS2002 utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device IRLMS2002 for use in battery and load management applications.

The Micro6 package with its customized leadframe produces a HEXFET power MOSFET IRLMS2002 with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.




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