Specifications Parameter Max. Units VDS Drain- Source Voltage 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 6.5 ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 5.2 A IDM Pulsed Drain Current 20 PD @TA = 25°C Power Dissipation...
IRLMS2002: Specifications Parameter Max. Units VDS Drain- Source Voltage 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 6.5 ID @ TA= 70°C Continuous Drain Curren...
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Parameter |
Max. |
Units | |
VDS | Drain- Source Voltage |
20 |
V |
ID @ TA = 25°C | Continuous Drain Current, VGS @ 4.5V |
6.5 |
|
ID @ TA= 70°C | Continuous Drain Current, VGS @ 4.5V |
5.2 |
A |
IDM | Pulsed Drain Current |
20 |
|
PD @TA = 25°C | Power Dissipation |
2.0 |
|
PD @TA = 70°C | Power Dissipation |
1.3 |
W |
Linear Derating Factor |
0.016 |
W/°C | |
VGS | Gate-to-Source Voltage |
± 12 |
V |
TJ, TSTG | Junction and Storage Temperature Range |
-55 to + 150 |
°C |
These N-Channel MOSFETs from International Rectifier IRLMS2002 utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device IRLMS2002 for use in battery and load management applications.
The Micro6 package with its customized leadframe produces a HEXFET power MOSFET IRLMS2002 with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.