IRLMS1902

Specifications Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @4.5V 3.2 A ID @ TA = 70°C Continuous Drain Current, VGS @4.5V 2.6 IDM Pulsed Drain Current 18 PD @TA = 25°C Power Dissipation 1.7 W Linear Derating Factor 13 W/°C VGS G...

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SeekIC No. : 004378429 Detail

IRLMS1902: Specifications Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @4.5V 3.2 A ID @ TA = 70°C Continuous Drain Current, VGS @4.5V 2.6 IDM Pulsed Drain Curre...

floor Price/Ceiling Price

Part Number:
IRLMS1902
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Specifications

Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @4.5V 3.2 A
ID @ TA = 70°C Continuous Drain Current, VGS @4.5V 2.6
IDM Pulsed Drain Current 18
PD @TA = 25°C Power Dissipation 1.7 W
Linear Derating Factor 13 W/°C
VGS Gate-to-Source Voltage ±8.0 V
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns 
TJ TSTG Junction and Storage Temperature Range -55 to + 150 °C



Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier IRLMS1902 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The Micro6 package with its customized leadframe produces a HEXFET® power MOSFET IRLMS1902 with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.




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