IRLML6402TR

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25° C: 3.7A
Power - Max: 1.3W
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 12nC @ 5V
Packaging: Cut Tape (CT)
Manufacturer: International Rectifier
Supplier Device Package: Micro3?/SOT-23
Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.7A, 4.5V
Input Capacitance (Ciss) @ Vds: 633pF @ 10V


Parameters:

Technical/Catalog Information	IRLML6402TR
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	3.7A
Rds On (Max) @ Id, Vgs	65 mOhm @ 3.7A, 4.5V
Input Capacitance (Ciss) @ Vds	633pF @ 10V
Power - Max	1.3W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	12nC @ 5V
Package / Case	Micro3?(SOT-23-3, TO-236AB)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRLML6402TR IRLML6402TR