Features: ·Ultra Low On-Resistance·P-Channel MOSFET·SOT-23 Footprint· Low Profile (<1.1mm)· Available in Tape and Reel· Fast SwitchingSpecifications Parameter Max. Units VDS Drain- Source Voltage -20 V ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V ...
IRLML6402: Features: ·Ultra Low On-Resistance·P-Channel MOSFET·SOT-23 Footprint· Low Profile (<1.1mm)· Available in Tape and Reel· Fast SwitchingSpecifications Parameter Max. Units VDS...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter |
Max. |
Units | |
VDS |
Drain- Source Voltage |
-20 |
V |
ID @ TA = 25°C |
Continuous Drain Current, VGS @ -4.5V |
-3.7 |
A |
ID @ TA= 70°C |
Continuous Drain Current, VGS @ -4.5V |
-2.2 | |
IDM |
Pulsed Drain Current |
-22 | |
PD @TA = 25°C |
Power Dissipation |
1.3 |
W |
PD @TA = 70°C |
Power Dissipation |
0.8 | |
Linear Derating Factor |
0.01 |
W/°C | |
EAS |
Single Pulse Avalanche Energy |
11 |
mJ |
VGS |
Gate-to-Source Voltage |
± 12 |
V |
TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
°C |
These P-Channel MOSFETs from International Rectifier IRLML6402 utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs IRLML6402 are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.