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IRLML6402

Features: ·Ultra Low On-Resistance·P-Channel MOSFET·SOT-23 Footprint· Low Profile (<1.1mm)· Available in Tape and Reel· Fast SwitchingSpecifications Parameter Max. Units VDS Drain- Source Voltage -20 V ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V ...

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SeekIC No. : 004378427 Detail

IRLML6402: Features: ·Ultra Low On-Resistance·P-Channel MOSFET·SOT-23 Footprint· Low Profile (<1.1mm)· Available in Tape and Reel· Fast SwitchingSpecifications Parameter Max. Units VDS...

IRLML6402 Data Sheet

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Part Number:
IRLML6402
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Ultra Low On-Resistance
·P-Channel MOSFET
·SOT-23 Footprint
· Low Profile (<1.1mm)
· Available in Tape and Reel
· Fast Switching




Specifications
Parameter
Max.
Units
VDS
Drain- Source Voltage
-20
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -4.5V
-3.7
A
ID @ TA= 70°C
Continuous Drain Current, VGS @ -4.5V
-2.2
IDM
Pulsed Drain Current
-22
PD @TA = 25°C
Power Dissipation
1.3
W
PD @TA = 70°C
Power Dissipation
0.8
Linear Derating Factor
0.01
W/°C
EAS
Single Pulse Avalanche Energy
11
mJ
VGS
Gate-to-Source Voltage
± 12
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C





Description

These P-Channel MOSFETs from International Rectifier IRLML6402 utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs IRLML6402 are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.






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