IRLML6401TR

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power - Max: 1.3W
Current - Continuous Drain (Id) @ 25° C: 4.3A
Series: HEXFET®
Packaging: Cut Tape (CT)
Gate Charge (Qg) @ Vgs: 15nC @ 5V
Manufacturer: International Rectifier
Supplier Device Package: Micro3?/SOT-23
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.3A, 4.5V
Input Capacitance (Ciss) @ Vds: 830pF @ 10V


Parameters:

Technical/Catalog Information	IRLML6401TR
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25° C	4.3A
Rds On (Max) @ Id, Vgs	50 mOhm @ 4.3A, 4.5V
Input Capacitance (Ciss) @ Vds	830pF @ 10V
Power - Max	1.3W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	15nC @ 5V
Package / Case	Micro3?(SOT-23-3, TO-236AB)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRLML6401TR IRLML6401TR