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IRLML6401PbF

PinoutSpecifications Symbol Parameter Max. Units VDS Drain-Source Voltage -12 V ID @ TA = 25 Continuous Drain Current,VGS @ 10V -4.3 A ID @ TA = 70 Continuous Drain Current,VGS @ 10V -3.4 IDM Pulsed Drain Current -34 PD @TA = 25 Power Dissipation...

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IRLML6401PbF: PinoutSpecifications Symbol Parameter Max. Units VDS Drain-Source Voltage -12 V ID @ TA = 25 Continuous Drain Current,VGS @ 10V -4.3 A ID @ TA = 70 Continuous D...

IRLML6401PbF Data Sheet

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Part Number:
IRLML6401PbF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Pinout

Connection Diagram


Specifications

Symbol
Parameter
Max.
Units
VDS Drain-Source Voltage
-12
V
ID @ TA = 25 Continuous Drain Current,VGS @ 10V
-4.3
A
ID @ TA = 70 Continuous Drain Current,VGS @ 10V
-3.4
IDM Pulsed Drain Current
-34
PD @TA = 25
 Power Dissipation
1.3
W
PD @TA = 70
 Power Dissipation
0.8
W
  Linear Derating Factor
0.01
W/
EAS Single Pulse Avalanche Energy
33
mJ
VGS Gate-to-Source Voltage
±8.0
V
TJ, TSTG Junction and Storage Temperature Range
-55 TO +150



Description

These P-Channel MOSFETs from International Rectifier IRLML6401PbF utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit of IRLML6401PbF, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint.  This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium.  The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.




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