IRLML6302TR

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Series: HEXFET®
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 600 mOhm @ 610mA, 4.5V
Power - Max: 540mW
Manufacturer: International Rectifier
Supplier Device Package: Micro3?/SOT-23
Current - Continuous Drain (Id) @ 25° C: 780mA
Input Capacitance (Ciss) @ Vds: 97pF @ 15V
Gate Charge (Qg) @ Vgs: 3.6nC @ 4.45V


Parameters:

Technical/Catalog Information	IRLML6302TR
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	780mA
Rds On (Max) @ Id, Vgs	600 mOhm @ 610mA, 4.5V
Input Capacitance (Ciss) @ Vds	97pF @ 15V
Power - Max	540mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	3.6nC @ 4.45V
Package / Case	SOT-23-3, TO-236-3, Micro3?, SSD3, SST3
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRLML6302TR IRLML6302TR