Features: · Ultra Low On-Resistance· P-Channel MOSFET· Surface Mount· Available in Tape & Reel· Low Gate Charge· Lead-FreePinoutSpecifications Parameter Max. Units VDS Drain- Source Voltage -3.0 V ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.0 A ID @ TA = 70°C...
IRLML5203PbF: Features: · Ultra Low On-Resistance· P-Channel MOSFET· Surface Mount· Available in Tape & Reel· Low Gate Charge· Lead-FreePinoutSpecifications Parameter Max. Units VDS Drain- Source...
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Parameter | Max. | Units | |
VDS | Drain- Source Voltage | -3.0 | V |
ID @ TA = 25°C | Continuous Drain Current, VGS @ -10V | -3.0 | A |
ID @ TA = 70°C | Continuous Drain Current, VGS @ -10V | -2.4 | |
IDM | Pulsed Drain Current | -24 | |
PD @ TA = 25°C | Power Dissipation | 1.25 | W |
PD @ TA = 70°C | Power Dissipation | 0.80 | |
Linear Derating Factor | 10 | mW/ | |
VGS | Gate-to-Source Voltage | ±20 | V |
TJ, TSTG | Junction and Storage Temperature Range | -55 to + 150 |
These P-channel MOSFETs from International Rectifier IRLML5203PbF utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.