HEX/MOS P-CH -30V -3.0A SOT-23
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These P-channel MOSFETs from International Rectifier IRLML5203 utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit of IRLML5203 provides the designer with an extremely efficient device for use in battery and load management applications.
A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
Technical/Catalog Information | IRLML5203 |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 3A |
Rds On (Max) @ Id, Vgs | 98 mOhm @ 3A, 10V |
Input Capacitance (Ciss) @ Vds | 510pF @ 25V |
Power - Max | 1.25W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 14nC @ 10V |
Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
FET Feature | Logic Level Gate |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRLML5203 IRLML5203 |