MOSFET N-CH 30V 1.2A SOT-23
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Series: | HEXFET® | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 11.5 dB at 500 MHz | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 30V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 1.2A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 250 mOhm @ 910mA, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 1V @ 250µA | Gate Charge (Qg) @ Vgs: | 5nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 85pF @ 25V | ||
Power - Max: | 540mW | Mounting Type: | Surface Mount | ||
Package / Case: | TO-236-3, SC-59, SOT-23-3 | Supplier Device Package: | Micro3?/SOT-23 |
Technical/Catalog Information | IRLML2803TR |
Vendor | International Rectifier (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 1.2A |
Rds On (Max) @ Id, Vgs | 250 mOhm @ 910mA, 10V |
Input Capacitance (Ciss) @ Vds | 85pF @ 25V |
Power - Max | 540mW |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 5nC @ 10V |
Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRLML2803TR IRLML2803TR IRLML2803CT ND IRLML2803CTND IRLML2803CT |