IRLML2502TR

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power - Max: 1.25W
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 12nC @ 5V
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25° C: 4.2A
Manufacturer: International Rectifier
Supplier Device Package: Micro3?/SOT-23
Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) @ Vds: 740pF @ 15V


Parameters:

Technical/Catalog Information	IRLML2502TR
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	4.2A
Rds On (Max) @ Id, Vgs	45 mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) @ Vds	740pF @ 15V
Power - Max	1.25W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	12nC @ 5V
Package / Case	SOT-23-3, TO-236-3, Micro3?, SSD3, SST3
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRLML2502TR IRLML2502TR IRLML2502CT ND IRLML2502CTND IRLML2502CT