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IRLM6402PbF

Features: · Ultra Low On-Resistance· P-Channel MOSFET·SOT-23 Footprint· Low Profile (<1.1mm)· Available in Tape and Reel· Fast Switching· Lead-FreeSpecifications Parameter Max. Units VGS Drain- Source Voltage -20 V ID @ TA = 25ID @ TA = 70IDM Continuous Drain Current, VGS @ -...

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IRLM6402PbF: Features: · Ultra Low On-Resistance· P-Channel MOSFET·SOT-23 Footprint· Low Profile (<1.1mm)· Available in Tape and Reel· Fast Switching· Lead-FreeSpecifications Parameter Max. Units ...

IRLM6402PbF Data Sheet

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Part Number:
IRLM6402PbF
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Ultra Low On-Resistance
· P-Channel MOSFET
·SOT-23 Footprint
· Low Profile (<1.1mm)
· Available in Tape and Reel
· Fast Switching
· Lead-Free


Specifications

  Parameter Max. Units
VGS
 Drain- Source Voltage -20 V
ID @ TA = 25

ID @ TA = 70

IDM		 Continuous Drain Current, VGS @ -4.5V**

Continuous Drain Current, VGS @ -4.5V*

Pulsed Drain Current 		-3.7

-2.2

-22		 A
PD @TA = 25

PD @TA = 70		 Power Dissipation

Power Dissipation 		1.3

0.8		 W
  Linear Derating Factor 0.01 W/
EAS

 Single Pulse Avalanche Energy

 11

 mJ

VAS

TJ, TSTG		 Gate-to-Source Voltage

Junction and Storage Temperature Range		 ± 12

-55 to + 150		 V




Description

These P-Channel MOSFETs from International Rectifier IRLM6402PbF utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLM6402PbF design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best
available.




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