Features: · Ultra Low On-Resistance· P-Channel MOSFET·SOT-23 Footprint· Low Profile (<1.1mm)· Available in Tape and Reel· Fast Switching· Lead-FreeSpecifications Parameter Max. Units VGS Drain- Source Voltage -20 V ID @ TA = 25ID @ TA = 70IDM Continuous Drain Current, VGS @ -...
IRLM6402PbF: Features: · Ultra Low On-Resistance· P-Channel MOSFET·SOT-23 Footprint· Low Profile (<1.1mm)· Available in Tape and Reel· Fast Switching· Lead-FreeSpecifications Parameter Max. Units ...
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Parameter | Max. | Units | |
VGS |
Drain- Source Voltage | -20 | V |
ID @ TA = 25 ID @ TA = 70 IDM |
Continuous Drain Current, VGS @ -4.5V** Continuous Drain Current, VGS @ -4.5V* Pulsed Drain Current |
-3.7 -2.2 -22 |
A |
PD @TA = 25 PD @TA = 70 |
Power Dissipation Power Dissipation |
1.3 0.8 |
W |
Linear Derating Factor | 0.01 | W/ | |
EAS |
Single Pulse Avalanche Energy |
11 |
mJ |
VAS TJ, TSTG |
Gate-to-Source Voltage Junction and Storage Temperature Range |
± 12 -55 to + 150 |
V |
These P-Channel MOSFETs from International Rectifier IRLM6402PbF utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLM6402PbF design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best
available.