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IRLM220ATF

MOSFET 200V N-Channel A-FET

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SeekIC No. : 00163859 Detail

IRLM220ATF: MOSFET 200V N-Channel A-FET

IRLM220ATF Data Sheet

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Part Number:
IRLM220ATF
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 1.13 A
Resistance Drain-Source RDS (on) : 0.8 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Package / Case : SOT-223
Resistance Drain-Source RDS (on) : 0.8 Ohms
Continuous Drain Current : 1.13 A


Parameters:

Technical/Catalog InformationIRLM220ATF
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C1.13A
Rds On (Max) @ Id, Vgs800 mOhm @ 570mA, 5V
Input Capacitance (Ciss) @ Vds 430pF @ 25V
Power - Max2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs15nC @ 5V
Package / CaseSOT-223
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRLM220ATF
IRLM220ATF



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