Features: Avalanche Rugged TechnologyRugged Gate Oxide Technology Lower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 10 µA(Max.) @ VDS = 200VLower RDS(ON) : 0.609 Ω (Typ.)Specifications Symbol Characteristic Value Units VDSS Drai...
IRLM220A: Features: Avalanche Rugged TechnologyRugged Gate Oxide Technology Lower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 10 µA(Max.) @ VDS = 200VLower R...
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Symbol | Characteristic | Value | Units |
VDSS | Drain-to-Source Voltage | 200 | V |
ID | Continuous Drain Current (TA=25°C) | 1.13 | A |
Continuous Drain Current (TA=70°C) | 0.9 | ||
IDM | Drain Current-Pulsed (1) | 9 | A |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulsed Avalanche Energy (2) | 29 | mJ |
IAR | Avalanche Current (1) | 1.13 | A |
EAR | Repetitive Avalanche Energy (1) | 0.2 | mJ |
dv/dt | Peak Diode Recovery dv/dt (3) | 5 | V/ns |
PD |
Total Power Dissipation (TA=25°C)* |
2 0.016 |
W W/°C |
TJ , TSTG | Operating Junction and Storage Temperature Range | - 55 to +150 | °C |
TL | Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds | 300 |