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IRLM210ATF

MOSFET 200V N-Channel a-FET Logic Level

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SeekIC No. : 00163275 Detail

IRLM210ATF: MOSFET 200V N-Channel a-FET Logic Level

IRLM210ATF Data Sheet

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Part Number:
IRLM210ATF
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.77 A
Resistance Drain-Source RDS (on) : 1.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Resistance Drain-Source RDS (on) : 1.5 Ohms
Package / Case : SOT-223
Continuous Drain Current : 0.77 A


Parameters:

Technical/Catalog InformationIRLM210ATF
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C770mA
Rds On (Max) @ Id, Vgs1.5 Ohm @ 390mA, 5V
Input Capacitance (Ciss) @ Vds 240pF @ 25V
Power - Max1.8W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs9nC @ 5V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRLM210ATF
IRLM210ATF



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