IRLL3303PBF

MOSFET

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SeekIC No. : 00147281 Detail

IRLL3303PBF: MOSFET

floor Price/Ceiling Price

US $ .26~.71 / Piece | Get Latest Price
Part Number:
IRLL3303PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.71
  • $.44
  • $.3
  • $.26
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 16 V Continuous Drain Current : 4.6 A
Resistance Drain-Source RDS (on) : 45 mOhms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : 16 V
Package / Case : SOT-223
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 45 mOhms
Continuous Drain Current : 4.6 A


Features:

· Surface Mount
· Dynamic dv/dt Rating
· Logic-Level Gate Drive
· Fast Switching
· Ease of Paralleling
· Advanced Process Technology
· Ultra Low On-Resistance
· Lead-Free



Specifications

  Parameter Max. V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 6.5 A
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 4.6
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 3.7
IDM Pulsed Drain Current 37
PD @TA = 25°C Power Dissipation (PCB Mount)** 2.1 W
PD @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W/°C
  Linear Derating Factor (PCB Mount)* 8.3 V
VGS Gate-to-Source Voltage ± 16 V
EAS Single Pulse Avalanche Energy 140 mJ
IAR Avalanche Current 4.6 A
EAR Repetitive Avalanche Energy 0.10 mJ
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
dv/dt Peak Diode Recovery dv/dt 1.3 V/ns



Description

Fifth Generation HEXFETs from International Rectifier IRLL3303PbF utilize advanced processing techniques to achieve  extremely low on-resistance per silicon area. This benefit of IRLL3303PbF, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SOT-223 package of IRLL3303PbF is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.

Its unique package design allows for easy automatic pickand- place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.




Parameters:

Technical/Catalog InformationIRLL3303PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C4.6A
Rds On (Max) @ Id, Vgs31 mOhm @ 4.6A, 10V
Input Capacitance (Ciss) @ Vds 840pF @ 25V
Power - Max2.1W
PackagingBulk
Gate Charge (Qg) @ Vgs50nC @ 10V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRLL3303PBF
IRLL3303PBF



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