Transistor Polarity
: N-Channel
Mounting Style
: SMD/SMT
Drain-Source Breakdown Voltage
: 30 V
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: 16 V
Package / Case
: SOT-223
Configuration
: Single Dual Drain
Resistance Drain-Source RDS (on)
: 45 mOhms
Continuous Drain Current
: 4.6 A
Features: · Surface Mount
· Dynamic dv/dt Rating
· Logic-Level Gate Drive
· Fast Switching
· Ease of Paralleling
· Advanced Process Technology
· Ultra Low On-Resistance
· Lead-FreeSpecifications
| |
Parameter |
Max. |
V |
| ID @ TA = 25°C |
Continuous Drain Current, VGS @ 10V** |
6.5 |
A |
| ID @ TA = 25°C |
Continuous Drain Current, VGS @ 10V* |
4.6 |
| ID @ TA = 70°C |
Continuous Drain Current, VGS @ 10V* |
3.7 |
| IDM |
Pulsed Drain Current |
37 |
| PD @TA = 25°C |
Power Dissipation (PCB Mount)** |
2.1 |
W |
| PD @TA = 25°C |
Power Dissipation (PCB Mount)* |
1.0 |
W/°C |
| |
Linear Derating Factor (PCB Mount)* |
8.3 |
V |
| VGS |
Gate-to-Source Voltage |
± 16 |
V |
| EAS |
Single Pulse Avalanche Energy |
140 |
mJ |
| IAR |
Avalanche Current |
4.6 |
A |
| EAR |
Repetitive Avalanche Energy |
0.10 |
mJ |
| TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
°C |
| dv/dt |
Peak Diode Recovery dv/dt |
1.3 |
V/ns |
DescriptionFifth Generation HEXFETs from International Rectifier IRLL3303PbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRLL3303PbF, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package of IRLL3303PbF is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pickand- place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
Parameters: | Technical/Catalog Information | IRLL3303PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 4.6A |
| Rds On (Max) @ Id, Vgs | 31 mOhm @ 4.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 840pF @ 25V |
| Power - Max | 2.1W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 50nC @ 10V |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLL3303PBF
IRLL3303PBF
|
IRLL3303PBF Data Sheet
