IRLL014

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 10 V
Package / Case : SOT-223
Continuous Drain Current : 2.7 A
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 0.2 Ohms


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	2.7	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	1.7	A
IDM	Pulsed Drain Current	22	A
PD @TC = 25°C	Power Dissipation	3.1	W
PD @TA = 25°C	Power Dissipation (PCB Mount)**	2.0
	Linear Derating Factor	0.025	W/°C
	Power Dissipation (PCB Mount)**	0.017
VGS	Gate-to-Source Voltage	-/+10	V
EAS	Single Pulse Avalanche Energy	100	mJ
IAR	Avalanche Current	2.7	A
EAR	Repetitive Avalanche Energy	0.31	mJ
dv/dt	Peak Diode Recovery dv/dt	4.5	V/ns
TJ,TSTG	Operating Junction Storage Temperature Range	-55 to 175
	Soldering Temperature, for 10 seconds	300(1.6mm from case)
	Mounting torque, 6-32 or M3 screw.	10 lbf•in (1.1N•m)

Description

Third Generation HEXFETs from International Rectifier IRLL014 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SOT-223 package of IRLL014 is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-andplace as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of grreater than 1.25W is possible in a typical surface mount application.