IRLL3303

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 1W
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Gate Charge (Qg) @ Vgs: 50nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 4.6A
Series: HEXFET®
Packaging: Tube
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.6A, 10V
Input Capacitance (Ciss) @ Vds: 840pF @ 25V


Specifications

	Parameter	Max.	Units
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V**	6.5	A
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V*	4.6
ID @ TA = 70°C	Continuous Drain Current, VGS @ 10V*	3.7
IDM	Pulsed Drain Current	37
PD @TA = 25°C	Power Dissipation(PCB Mount)**	2.1	W
PD @TA = 25°C	Power Dissipation(PCB Mount)*	1.0	W
	Linear Derating Factor(PCB Mount)*	8.3	W/°C
VGS	Gate-to-Source Voltage	±16	V
EAS	Single Pulse Avalanche Energy	140	mJ
IAR	Avalanche Current	4.6	A
EAR	Repetitive Avalanche Energy	0.10	mJ
dv/dt	Peak Diode Recovery dv/dt	1.3	V/ns
TJ TSTG	Junction and Storage Temperature Range	-55 to + 175	°C

Description

Fifth Generation HEXFETs from International Rectifier IRLL3303 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLL3303 design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SOT-223 package of IRLL3303 is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.

The unique package of IRLL3303 design allows for easy automatic pickand- place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.