IRLL024ZPBF

MOSFET

product image

IRLL024ZPBF Picture
SeekIC No. : 00146367 Detail

IRLL024ZPBF: MOSFET

floor Price/Ceiling Price

US $ .21~.64 / Piece | Get Latest Price
Part Number:
IRLL024ZPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.64
  • $.37
  • $.21
  • $.21
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/10/30

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : 16 V Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 100 mOhms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : 16 V
Drain-Source Breakdown Voltage : 55 V
Package / Case : SOT-223
Continuous Drain Current : 5 A
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 100 mOhms


Features:

· Advanced Process Technology
· Ultra Low On-Resistance
·150°C Operating Temperature
· Fast Switching
· Repetitive Avalanche Allowed up to Tjmax
· Lead-Free



Specifications

  Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 􀀀 5.0 A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 􀀀 4.0
IDM Pulsed Drain Current 40
PD @TA = 25°C Power Dissipation 2.8 W
PD @TA = 25°C Power Dissipation 1.0 W
  Linear Derating Factor 0.02 mW/
VGS Gate-to-Source Voltage ± 16 V
EAS (Thermally limited) Single Pulse Avalanche Energy 21 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value 38 mJ
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150



Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET  IRLL024ZPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of IRLL024ZPbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




Parameters:

Technical/Catalog InformationIRLL024ZPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C5A
Rds On (Max) @ Id, Vgs60 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds 380pF @ 25V
Power - Max1W
PackagingTube
Gate Charge (Qg) @ Vgs11nC @ 5V
Package / CaseSOT-223 (3 leads + Tab), SC-73, TO-261AA
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRLL024ZPBF
IRLL024ZPBF



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Static Control, ESD, Clean Room Products
LED Products
Discrete Semiconductor Products
Transformers
Optoelectronics
View more