Transistor Polarity
: N-Channel
Mounting Style
: SMD/SMT
Drain-Source Breakdown Voltage
: 30 V
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: 16 V
Continuous Drain Current
: 5.5 A
Package / Case
: SOT-223
Configuration
: Single Dual Drain
Resistance Drain-Source RDS (on)
: 70 mOhms
Features: · Surface Mount
· Advanced Process Technology
·Ultra Low On-Resistance
· Dynamic dv/dt Rating
· Fast Switching
· Fully Avalanche Rated
·Lead-FreeSpecifications
| |
Parameter |
Max. |
Units |
ID @ TA = 25
ID @ TA = 25
ID @ TA = 70
IDM |
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current |
5.5
3.9
3.1
16 |
A |
PD @TA = 25
PD @TA = 25 |
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)* |
2.1
1.0 |
W
W |
| |
Linear Derating Factor (PCB Mount)* |
8.3 |
mW/ |
VGS
EAS
IAR |
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current |
± 16
180
3.9 |
V
mJ
A |
EAR
dv/dt
TJ, TSTG |
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range |
0.1
5.0
-55 to + 150 |
mJ
V/ns
|
DescriptionFifth Generation HEXFETs from International Rectifier IRLL2703PBF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLL2703PBF design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package of IRLL2703PBF is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand- place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
Parameters: | Technical/Catalog Information | IRLL2703PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 3.9A |
| Rds On (Max) @ Id, Vgs | 45 mOhm @ 3.9A, 10V |
| Input Capacitance (Ciss) @ Vds | 530pF @ 25V |
| Power - Max | 1W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 14nC @ 5V |
| Package / Case | SOT-223 (3 leads + Tab), SC-73, TO-261AA |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLL2703PBF
IRLL2703PBF
|
IRLL2703PBF Data Sheet
