MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | 16 V | Continuous Drain Current : | 5.5 A | ||
Resistance Drain-Source RDS (on) : | 70 mOhms | Configuration : | Single Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-223 | Packaging : | Tube |
Parameter | Max. | Units | |
ID @ TA = 25 ID @ TA = 25 ID @ TA = 70 IDM |
Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V* Continuous Drain Current, VGS @ 10V* Pulsed Drain Current |
5.5 3.9 3.1 16 |
A |
PD @TA = 25 PD @TA = 25 |
Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* |
2.1 1.0 |
W W |
Linear Derating Factor (PCB Mount)* | 8.3 | mW/ | |
VGS EAS IAR |
Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current |
± 16 180 3.9 |
V mJ A |
EAR dv/dt TJ, TSTG |
Repetitive Avalanche Energy* Peak Diode Recovery dv/dt Junction and Storage Temperature Range |
0.1 5.0 -55 to + 150 |
mJ V/ns |
Fifth Generation HEXFETs from International Rectifier IRLL2703PBF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLL2703PBF design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package of IRLL2703PBF is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand- place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
Technical/Catalog Information | IRLL2703PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 3.9A |
Rds On (Max) @ Id, Vgs | 45 mOhm @ 3.9A, 10V |
Input Capacitance (Ciss) @ Vds | 530pF @ 25V |
Power - Max | 1W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 14nC @ 5V |
Package / Case | SOT-223 (3 leads + Tab), SC-73, TO-261AA |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRLL2703PBF IRLL2703PBF |