IRLL110PBF

MOSFET N-Chan 100V 1.5 Amp

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SeekIC No. : 00147212 Detail

IRLL110PBF: MOSFET N-Chan 100V 1.5 Amp

floor Price/Ceiling Price

US $ .24~.34 / Piece | Get Latest Price
Part Number:
IRLL110PBF
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.34
  • $.31
  • $.27
  • $.24
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 10 V Continuous Drain Current : 1.5 A
Resistance Drain-Source RDS (on) : 540 mOhms at 5 V Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 1.5 A
Gate-Source Breakdown Voltage : +/- 10 V
Package / Case : SOT-223
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 540 mOhms at 5 V


Features:

· Surface Mount
· Available in Tape & Reel
· Dynamic dv/dt Rating
· Repetitive Avalanche Rated
· Logic-Level Gate Drive
· RDS(on)Specified at VGS= 4V & 5V
· Fast Switching
· Lead-Free




Specifications

  Parameter Max. Units
ID @ TC=25 Continuous Drain Current VGS @ 5.0V 1.5 A
ID @ TC=100 Continuous Drain Current VGS @ 5.0V 0.93
IDM Pulsed Drain Current 15
PD @ TC= 25 Power Dissipation 3.1 W
PD @ TA = 25 Power Dissipation (PCB Mount)** 2.0
  Linear Derating Factor 0.025 W/
  Linear Derating Factor (PCB Mount)** 0.017
VGS Gate-to-Source Voltage -/+10 V
EAS Single Pulse Avalanche Energy 50 mJ
IAR Avalanche Current 1.5 A
EAR Repetitive Avalanche Energy 0.31 mJ
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
TJ,TSTG Junction and Storage Temperature Range -55 to +150
  Soldewring Temperature, for 10 seconds 300 (1.6mm from case)

Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig.11)
VDD=25V, starting TJ = 25, L = 25 mH RG = 25, IAS = 1.5A. (See Figure 12)
ISD 5.6A, di/dt 75A/µs, VDD V(BR)DSS,TJ 150
Pulse width 300s; duty cycle 2%.
   ** When mounted on 1" square PCB (FR-4 or G-10 Material).
          For recommended footprint and soldering techniques refer to application note #AN-994.


Description

Third Generation HEXFETs from International Rectifier IRLL110PbF provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

The SOT-223 package of IRLL110PbF is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-andplace as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of grreater than 1.25W is possible in a typical surface mount application.




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