Transistor Polarity
: N-Channel
Mounting Style
: SMD/SMT
Drain-Source Breakdown Voltage
: 100 V
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Continuous Drain Current
: 1.5 A
Gate-Source Breakdown Voltage
: +/- 10 V
Package / Case
: SOT-223
Configuration
: Single Dual Drain
Resistance Drain-Source RDS (on)
: 540 mOhms at 5 V
Features: · Surface Mount
· Available in Tape & Reel
· Dynamic dv/dt Rating
· Repetitive Avalanche Rated
· Logic-Level Gate Drive
· RDS(on)Specified at VGS= 4V & 5V
· Fast Switching
· Lead-Free
Specifications
| |
Parameter |
Max. |
Units |
| ID @ TC=25 |
Continuous Drain Current VGS @ 5.0V |
1.5 |
A |
| ID @ TC=100 |
Continuous Drain Current VGS @ 5.0V |
0.93 |
| IDM |
Pulsed Drain Current |
15 |
| PD @ TC= 25 |
Power Dissipation |
3.1 |
W |
| PD @ TA = 25 |
Power Dissipation (PCB Mount)** |
2.0 |
| |
Linear Derating Factor |
0.025 |
W/ |
| |
Linear Derating Factor (PCB Mount)** |
0.017 |
| VGS |
Gate-to-Source Voltage |
-/+10 |
V |
| EAS |
Single Pulse Avalanche Energy |
50 |
mJ |
| IAR |
Avalanche Current |
1.5 |
A |
| EAR |
Repetitive Avalanche Energy |
0.31 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
5.5 |
V/ns |
| TJ,TSTG |
Junction and Storage Temperature Range |
-55 to +150 |
|
| |
Soldewring Temperature, for 10 seconds |
300 (1.6mm from case) |
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig.11)
V
DD=25V, starting T
J = 25, L = 25 mH R
G = 25
, I
AS = 1.5A. (See Figure 12)
I
SD 5.6A, di/dt 75A/µs, V
DD V
(BR)DSS,T
J 150
Pulse width 300s; duty cycle 2%.
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
DescriptionThird Generation HEXFETs from International Rectifier IRLL110PbF provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-223 package of IRLL110PbF is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-andplace as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of grreater than 1.25W is possible in a typical surface mount application.
IRLL110PBF Data Sheet
