IRLL024Z

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 1W
Current - Continuous Drain (Id) @ 25° C: 5A
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Series: HEXFET®
Packaging: Tube
Drain to Source Voltage (Vdss): 55V
Gate Charge (Qg) @ Vgs: 11nC @ 5V
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds: 380pF @ 25V


Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· 150°C Operating Temperature
· Fast Switching
· Repetitive Avalanche Allowed up to Tjmax


Specifications

	Parameter	Max.	Units
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V (Silicon Limited)	5.0	A
ID @ TA = 70°C	Continuous Drain Current, VGS @ 10V	4.0
IDM	Pulsed Drain Current	40
PD @TA = 25°C	Power Dissipation (PCB Mount)	2.8
PD @TA = 25°C	Power Dissipation (PCB Mount)	1.0	W
	Linear Derating Factor	0.02	mW/
VGS	Gate-to-Source Voltage	± 16	V
EAS(Thermally limited)	Single Pulse Avalanche Energy	21	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	38
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ, TSTG	Operating Junction and Storage Temperature Range	-55 to + 150

Description

Specifically designed for Automotive applications, this HEXFET^® Power MOSFET IRLL024Z utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of IRLL024Z combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.