Transistor Polarity
: N-Channel
Mounting Style
: SMD/SMT
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: 16 V
Drain-Source Breakdown Voltage
: 55 V
Package / Case
: SOT-223
Continuous Drain Current
: 4.4 A
Configuration
: Single Dual Drain
Resistance Drain-Source RDS (on)
: 100 mOhms
Features: · Surface Mount
· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· Fast Switching
· Fully Avalanche Rated
· Lead-FreeSpecifications
| Symbol |
Parameter |
Max. |
Units |
| ID @ VGS = 12V, TC = 25°C |
Continuous Drain Current |
4.4 |
A |
| ID @ VGS = 12V, TC =100°C |
Continuous Drain Current |
3.1 |
A |
| IDM |
Pulsed Drain Current |
2.5 |
A |
| PD @ TV = 25 |
Power Dissipation |
12 |
W |
| |
Linear Derating Factor |
2.1 |
W/ |
| VGS |
Gate-to-Source Voltage |
1.0 |
V |
| EAS |
Single Pulse Avalanche Energy |
8.3 |
mJ |
| IAR |
Avalanche Current |
±16 |
A |
| EAR |
Repetitive Avalanche Energy |
120 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
| TJ, TSTG |
Operating Junction
Storage Temperature Range |
-55 to 150 |
|
DescriptionFifth Generation HEXFETs from International Rectifier IRLL024NPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLL024NPbF design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package of IRLL024NPbF is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.
The unique package of IRLL024NPbF design allows for easy automatic pickand- place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
Parameters: | Technical/Catalog Information | IRLL024NPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 3.1A |
| Rds On (Max) @ Id, Vgs | 65 mOhm @ 3.1A, 10V |
| Input Capacitance (Ciss) @ Vds | 510pF @ 25V |
| Power - Max | 1W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 15.6nC @ 5V |
| Package / Case | SOT-223 (3 leads + Tab), SC-73, TO-261AA |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLL024NPBF
IRLL024NPBF
|
IRLL024NPBF Data Sheet
