Specifications Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 4.4 A ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 3.1 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 2.5 IDM Pulsed Drain Current 12 PD @TA = 25°C Power ...
IRLL024N: Specifications Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 4.4 A ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 3.1 ID @ TA = 70°C Conti...
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Parameter | Max. | Units | |
ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V** | 4.4 | A |
ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V* | 3.1 | |
ID @ TA = 70°C | Continuous Drain Current, VGS @ 10V* | 2.5 | |
IDM | Pulsed Drain Current | 12 | |
PD @TA = 25°C | Power Dissipation(PCB Mount)** | 2.1 | W |
PD @TA = 25°C | Power Dissipation(PCB Mount)* | 1.0 | W |
Linear Derating Factor(PCB Mount)* | 8.3 | W/°C | |
VGS | Gate-to-Source Voltage | ±16 | V |
EAS | Single Pulse Avalanche Energy | 120 | mJ |
IAR | Avalanche Current | 3.1 | A |
EAR | Repetitive Avalanche Energy* | 0.1 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
TJ TSTG | Junction and Storage Temperature Range | -55 to + 175 | °C |
Fifth Generation HEXFETs from International Rectifier IRLL024N utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLL024N design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package of IRLL024N is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pickand- place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application