IRLL014PBF

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 10 V
Package / Case : SOT-223
Continuous Drain Current : 2.7 A
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 200 mOhms at 5 V


Features:

· Surface Mount
· Available in Tape & Reel
· Dynamic dv/dt Rating
·Logic-Level Gate Drive
· RDS(on) Specified at VGS=4V & 5V
· Fast Switching
· Ease of Paralleling
·Lead-Free


Specifications

	Parameter	Max.	Units
ID @ Tc = 25	Continuous Drain Current, VGS @ 10 V	2.7	A
ID @ Tc = 100	Continuous Drain Current, VGS @ 10 V	1.7
IDM	Pulsed Drain Current	22
PD @Tc = 25	Power Dissipation	3.1	W
PD @TA = 25	Power Dissipation (PCB Mount)**	2.0
	Linear Derating Factor	0.025	W/
	Linear Derating Factor (PCB Mount)**	0.017
VGS	Gate-to-Source Voltage	-/+10	V
EAS	Single Pulse Avalanche Energy	100	mJ
IAR	Avalanche Current	2.7	A
EAR	Repetitive Avalanche Energy	0.31	mJ
dv/dt	Peak Diode Recovery dv/dt	4.5	V/ns
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150
	Soldewring Temperature, for 10 seconds	300 (1.6mm from case)

Description

Third Generation HEXFETs from International Rectifier IRLL014PbF provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-andplace as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of grreater than 1.25W is possible in a typical surface mount application.