IRLBD59N04ETRLP

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40V
Gate Charge (Qg) @ Vgs: 50nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 59A
Power - Max: 130W
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 18 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds: 2190pF @ 25V
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Supplier Device Package: TO-263-5


Parameters:

Technical/Catalog Information	IRLBD59N04ETRLP
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	59A
Rds On (Max) @ Id, Vgs	18 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	2190pF @ 25V
Power - Max	130W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	50nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (5 leads + tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRLBD59N04ETRLP IRLBD59N04ETRLP