MOSFET MOSFT 30V 190A 1.95mOhm 57nC Qg
IRLB3813PBF: MOSFET MOSFT 30V 190A 1.95mOhm 57nC Qg
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 260 A | ||
Resistance Drain-Source RDS (on) : | 2.6 mOhms | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Technical/Catalog Information | IRLB3813PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 120A |
Rds On (Max) @ Id, Vgs | 1.95 mOhm @ 60A, 10V |
Input Capacitance (Ciss) @ Vds | 8420pF @ 15V |
Power - Max | 230W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 86nC @ 4.5V |
Package / Case | TO-220AB |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRLB3813PBF IRLB3813PBF |