IRLBA3803

MOSFET N-CH 30V 179A SUPER-220

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IRLBA3803 Picture
SeekIC No. : 003434163 Detail

IRLBA3803: MOSFET N-CH 30V 179A SUPER-220

floor Price/Ceiling Price

US $ 1.94~1.94 / Piece | Get Latest Price
Part Number:
IRLBA3803
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~200
  • Unit Price
  • $1.94
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Series: HEXFET® Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 179A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 5 mOhm @ 71A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 140nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 5000pF @ 25V
Power - Max: 270W Mounting Type: Through Hole
Package / Case: Super-220? Supplier Device Package: SUPER-220? (TO-273AA)    

Description

Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Input Capacitance (Ciss) @ Vds: 5000pF @ 25V
Gate Charge (Qg) @ Vgs: 140nC @ 4.5V
Supplier Device Package: SUPER-220? (TO-273AA)
Power - Max: 270W
Current - Continuous Drain (Id) @ 25° C: 179A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 71A, 10V
Package / Case: Super-220?


Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 179 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 126 A
IDM Pulsed Drain Current 720 A
PD @TC = 25°C Power Dissipation 270 W
  Linear Derating Factor 1.8 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 610 mJ
IAR Avalanche Current 71 A
EAR Repetitive Avalanche Energy 27 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range
-55 to 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)
  Recommended clip force 20 N



Description

Fifth Generation HEXFETs from International Rectifier IRLBA3803 utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLBA3803 design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The Super-220 IRLBA3803 is a package that has been designed to have the same mechanical outline and pinout as the industry standard TO-220 but can house a considerably larger silicon die. The IRLBA3803 has increased current handling capability over both the TO-220 and the much larger TO-247 package.

This makes IRLBA3803 ideal to reduce component count in multiparalled TO-220 applications, reduce system power dissipation, upgrade existing designs or have TO-247 performance in a TO-220 outline.

This package has also been designed to meet automotive qualification standard Q101.




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