Transistor Polarity
: N-Channel
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: SMD/SMT
Drain-Source Breakdown Voltage
: 100 V
Package / Case
: D2PAK
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 10 V
Continuous Drain Current
: 28 A
Resistance Drain-Source RDS (on)
: 0.077 Ohms
DescriptionThird generation HEXFETs from international rectifier IRL540S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL540S provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The SMD-220 IRL540S is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The features of IRL540S can be summarized as (1)surface mount; (2)available in tape & reel; (3)dynamic dv/dt rating; (4)repetitive avalanche rated; (5)logic -level gate drive; (6)RDS(on) specified at VGS=4V & 5V; (7)175°C operating temperature.
The absolute maximum ratings of IRL540S are (1)ID @, TC=25°C, GS@5.0V continuous drain current: 28A; (2)ID @ TC = 100°C, GS@5.0V continuous drain current: 20A; (3)pulsed drain current IDM: 110A; (4)PD @ TC = 25°C Max. power dissipation: 150W; (5)linear derating factor: 1.0 W/°C; (6)VGS gate-to-source voltage: ±10V; (7)EAS single pulse avalanche energy: 440mJ; (8)IAR avalanche current: 28A; (9)EAR repetitive avalanche energy: 15mJ; (10)dv/dt peak diode recovery dv/dt: 5.5V/ns; (11)TJ operating junction: -55 to 175°C; (12)TJ TSTG storage temperature range: -55 to 175°C; (13)lead temperature: 300 (0.063 in. (1.6mm) from case for 10s); (14)PD @ TA= 25°C Max. power dissipation: 3.7W.
IRL540S Data Sheet
