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IRL510A

MOSFET 100V N-Channel a-FET Logic Level

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SeekIC No. : 00161463 Detail

IRL510A: MOSFET 100V N-Channel a-FET Logic Level

IRL510A Data Sheet

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Part Number:
IRL510A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 5.6 A
Resistance Drain-Source RDS (on) : 0.44 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 5.6 A
Resistance Drain-Source RDS (on) : 0.44 Ohms


Features:

Logic-Level Gate Drive
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10mA (Max.) @ VDS = 100V
 Lower RDS(ON): 0.336W (Typ.)


Specifications

Symbol
 Characteristic
Value
Units
VDSS
 Drain-to-Source Voltage
100
V
ID
 Continuous Drain Current (TC=25°C)
5.6
A
Continuous Drain Current (TC=100°C)
4.0
IDM
 Drain Current-Pulsed (1)
20
A
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulsed Avalanche Energy (2)
62
mJ
IAR
 Avalanche Current (1)
5.6
A
EAR
 Repetitive Avalanche Energy (1)
3.7
mJ
dv/dt
 Peak Diode Recovery dv/dt (3)
6.5
V/ns
PD
 Total Power Dissipation (TC=25°C)
Linear Derating Factor
37
0.25
W
W/°C
TJ , TSTG
 Operating Junction and
Storage Temperature Range
- 55 to +175
°C
TL
 Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
300



Parameters:

Technical/Catalog InformationIRL510A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C5.6A
Rds On (Max) @ Id, Vgs440 mOhm @ 2.8A, 5V
Input Capacitance (Ciss) @ Vds 235pF @ 25V
Power - Max37W
PackagingTube
Gate Charge (Qg) @ Vgs8nC @ 5V
Package / CaseTO-220
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRL510A
IRL510A



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