IRL540NL

MOSFET N-CH 100V 36A TO-262

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IRL540NL Picture
SeekIC No. : 003433023 Detail

IRL540NL: MOSFET N-CH 100V 36A TO-262

floor Price/Ceiling Price

Part Number:
IRL540NL
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/10

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 36A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 44 mOhm @ 18A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) @ Vgs: 74nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1800pF @ 25V
Power - Max: 3.8W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 2V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 36A
Packaging: Tube
Mounting Type: Through Hole
Input Capacitance (Ciss) @ Vds: 1800pF @ 25V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Manufacturer: International Rectifier
Power - Max: 3.8W
Rds On (Max) @ Id, Vgs: 44 mOhm @ 18A, 10V
Gate Charge (Qg) @ Vgs: 74nC @ 5V
Supplier Device Package: TO-262


Specifications

Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @10V
36
ID @ TC = 100°C Continuous Drain Current, VGS @10V
26
A
IDM Pulsed Drain Current
120
PD @TA = 25°C Power Dissipation
3.8
W
PD @TC = 25°C  Power Dissipation 

 140

 
Linear Derating Factor
0.91
W/°C
VGS Gate-to-Source Voltage
± 16
V
EAS Single Pulse Avalanche Energy
310
mJ
IAR Avalanche Current
18
A
EAR Repetitive Avalanche Energy
14
mJ
dv/dt Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)



Description

Fifth Generation HEXFETs from International Rectifier IRL540NL utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL540NL design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRL540NL is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL540NL provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRL540NL is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF540NL) is available for lowprofile applications.




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