IRL540

MOSFET N-Chan 100V 28 Amp

product image

IRL540 Picture
SeekIC No. : 00158566 Detail

IRL540: MOSFET N-Chan 100V 28 Amp

floor Price/Ceiling Price

US $ 1.63~1.75 / Piece | Get Latest Price
Part Number:
IRL540
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~720
  • 720~1000
  • Unit Price
  • $1.75
  • $1.63
  • Processing time
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 10 V Continuous Drain Current : 28 A
Resistance Drain-Source RDS (on) : 0.077 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 10 V
Continuous Drain Current : 28 A
Resistance Drain-Source RDS (on) : 0.077 Ohms


Features:

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• 175 Operating Temperature
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available







Specifications

PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
±10
Continuous Drain Current
VGS at 10 V
TC = 25
ID
28
A
TC = 100
20
Pulsed Drain Currenta, e
IDM
110
Linear Derating Factor
1.0
W/

Single Pulse Avalanche Energyb

EAS

440

mJ

Avalanche Currenta

IAR

28

A

Single Pulse Avalanche Energyb, e
EAR
15
mJ
Maximum Power Dissipation
TC = 25
PD
150
W
Peak Diode Recovery dV/dtc, e
dV/dt
5.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
Soldering Recommendations (Peak Temperature)
for 10 s
300d

Mounting Torque

6-32 or M3 screw

10

lbf ` in

1.1

N ` m

Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, Starting TJ = 25 , L = 260 H, RG = 25 , IAS = 30 A (see fig. 12).
c. ISD 30 A, dI/dt 200 A/s, VDD VDS, TJ 175 .
d. 1.6 mm from case.
e. Uses IRFZ34/SiHFZ34 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply







Description

Third generation Power MOSFETs IRL530S, SiHL530S  from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package of IRL530S, SiHL530S  is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.








Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Programmers, Development Systems
Hardware, Fasteners, Accessories
LED Products
Cable Assemblies
Cables, Wires
Line Protection, Backups
View more