FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 2V @ 250µA
Series: HEXFET®
Packaging: Tube
Current - Continuous Drain (Id) @ 25° C: 17A
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) @ Vds: 800pF @ 25V
Supplier Device Package: D2PAK
Rds On (Max) @ Id, Vgs: 100 mOhm @ 9A, 10V
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 34nC @ 5V
Power - Max: 3.8W
Specifications
| |
Parameter |
Max. |
Units |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
17 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
12 |
A |
| IDM |
Pulsed Drain Current |
60 |
A |
| PD @ TA = 25°C |
Power Dissipation |
3.8 |
W |
| PD @TC = 25°C |
Power Dissipation |
79 |
W |
| |
Linear Derating Factor |
0.53 |
W/°C |
| VGS |
Gate-to-Source Voltage |
±20 |
V |
| EAS |
Single Pulse Avalanche Energy |
150 |
mJ |
| IAR |
Avalanche Current |
9.0 |
A |
| EAR |
Repetitive Avalanche Energy |
7.9 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
| TJ,TSTG |
Operating Junction
Storage Temperature Range |
-55 to 175 |
|
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
|
DescriptionFifth Generation HEXFETs from International Rectifier IRL530NS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL530NS design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak IRL530NS is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL530NS provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRL530NS is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL530NS) is available for lowprofile applications.
IRL530NS Data Sheet
