IRL530N

Features: ·Logic-Level Gate Drive·Advanced Process Technology·Dynamic dv/dt Rating·175°C Operating Temperature·Fast Switching·Fully Avalanche RatedSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 A ID @ TC = 100°C Cont...

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SeekIC No. : 004378336 Detail

IRL530N: Features: ·Logic-Level Gate Drive·Advanced Process Technology·Dynamic dv/dt Rating·175°C Operating Temperature·Fast Switching·Fully Avalanche RatedSpecifications Parameter Max. Unit...

floor Price/Ceiling Price

Part Number:
IRL530N
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

·Logic-Level Gate Drive
·Advanced Process Technology
·Dynamic dv/dt Rating
·175°C Operating Temperature
·Fast Switching
·Fully Avalanche Rated



Specifications

Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
17
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
12
IDM
Pulsed Drain Current
60
PD @TC = 25°C
Power Dissipation
79
W
Linear Derating Factor
0.53
W/°C
VGS
Gate-to-Source Voltage
± 16
V
EAS
Single Pulse Avalanche Energy
150
mJ
IAR
Avalanche Current
9.0
A
EAR
Repetitive Avalanche Energy
7.9
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
oC
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)



Description

Fifth Generation HEXFETs from International Rectifier IRL530N utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL530N design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package of IRL530N is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.




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