IRL530A

MOSFET 100V N-Channel a-FET Logic Level

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SeekIC No. : 00162977 Detail

IRL530A: MOSFET 100V N-Channel a-FET Logic Level

floor Price/Ceiling Price

Part Number:
IRL530A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.12 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.12 Ohms


Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 100V
 Lower RDS(ON) : 0.101 (Typ.)



Specifications

Symbol
Characteristic
Value
Units
VDSS
Drain-to-Source Voltage
100
V
ID
Continuous Drain Current (TC=25°C)
14
A
Continuous Drain Current (TC=100°C)
9.9
IDM

Drain Current-Pulsed

49
A
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulsed Avalanche Energy
261
mJ
IAR
Avalanche Current
14
A
EAR
Repetitive Avalanche Energy
6.2
mJ
dv/dt
Peak Diode Recovery dv/dt
6.5
V/ns
PD
Total Power Dissipation (TC=25°C)
Linear Derating Factor
62
0.41
W
W/°C
TJ , TSTG
Operating Junction and
Storage Temperature Range
- 55 to +175
°C
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
300



Parameters:

Technical/Catalog InformationIRL530A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C14A
Rds On (Max) @ Id, Vgs120 mOhm @ 7A, 5V
Input Capacitance (Ciss) @ Vds 755pF @ 25V
Power - Max62W
PackagingTube
Gate Charge (Qg) @ Vgs24nC @ 5V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRL530A
IRL530A



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