IRL520NLPBF

MOSFET N-CH 100V 10A TO-262

product image

IRL520NLPBF Picture
SeekIC No. : 003432823 Detail

IRL520NLPBF: MOSFET N-CH 100V 10A TO-262

floor Price/Ceiling Price

US $ .34~.85 / Piece | Get Latest Price
Part Number:
IRL520NLPBF
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • 250~500
  • 500~1000
  • 1000~2500
  • Unit Price
  • $.85
  • $.75
  • $.59
  • $.52
  • $.46
  • $.36
  • $.34
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/6/12

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 10A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) @ Vgs: 20nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 440pF @ 25V
Power - Max: 3.8W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 2V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 20nC @ 5V
Current - Continuous Drain (Id) @ 25° C: 10A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 440pF @ 25V
Power - Max: 3.8W
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V


Parameters:

Technical/Catalog InformationIRL520NLPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs180 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 440pF @ 25V
Power - Max3.8W
PackagingTube
Gate Charge (Qg) @ Vgs20nC @ 5V
Package / CaseTO-262-3 (Straight Leads)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRL520NLPBF
IRL520NLPBF



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Computers, Office - Components, Accessories
Transformers
Crystals and Oscillators
Inductors, Coils, Chokes
Power Supplies - Board Mount
Cable Assemblies
View more