MOSFET 100V N-Channel a-FET Logic Level
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 9.2 A | ||
Resistance Drain-Source RDS (on) : | 0.22 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
Symbol |
Characteristic |
Value |
Units |
VDSS |
Drain-to-Source Voltage |
100 |
V |
ID |
Continuous Drain Current (TC=25°C) |
9.2 |
A |
Continuous Drain Current (TC=100°C) |
6.5 | ||
IDM |
Drain Current-Pulsed (1) |
32 |
A |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulsed Avalanche Energy (2) |
112 |
mJ |
IAR |
Avalanche Current (1) |
9.2 |
A |
EAR |
Repetitive Avalanche Energy (1) |
4.9 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt (2) |
6.5 |
V/ns |
PD |
Total Power Dissipation (TC=25°C) Linear Derating Factor |
49 0.33 |
W W/°C |
TJ , TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +175 |
°C |
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds |
300 |