IRL520A

MOSFET 100V N-Channel a-FET Logic Level

product image

IRL520A Picture
SeekIC No. : 00162696 Detail

IRL520A: MOSFET 100V N-Channel a-FET Logic Level

floor Price/Ceiling Price

Part Number:
IRL520A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 9.2 A
Resistance Drain-Source RDS (on) : 0.22 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 9.2 A
Resistance Drain-Source RDS (on) : 0.22 Ohms


Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10mA (Max.) @ VDS = 100V
 Lower RDS(ON): 0.176W (Typ.)



Specifications

Symbol
Characteristic
Value
Units
VDSS
Drain-to-Source Voltage
100
V
ID
Continuous Drain Current (TC=25°C)
9.2
A
Continuous Drain Current (TC=100°C)
6.5
IDM
Drain Current-Pulsed (1)
32
A
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulsed Avalanche Energy (2)
112
mJ
IAR
Avalanche Current (1)
9.2
A
EAR
Repetitive Avalanche Energy (1)
4.9
mJ
dv/dt
Peak Diode Recovery dv/dt (2)
6.5
V/ns
PD
Total Power Dissipation (TC=25°C)
Linear Derating Factor
49
0.33
W
W/°C
TJ , TSTG
Operating Junction and
Storage Temperature Range
- 55 to +175
°C
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
300



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Cable Assemblies
Power Supplies - External/Internal (Off-Board)
Prototyping Products
DE1
Audio Products
Test Equipment
Batteries, Chargers, Holders
View more