IRL510S

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.54 Ohms
Gate-Source Breakdown Voltage : +/- 10 V
Continuous Drain Current : 5.6 A
Package / Case : SMD-220


Description

Third generation HEXFETs from international rectifier IRL510S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 IRL510S is a surface mount power package capable of accommodating die sizes up to HEX-4. it provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The SMD-220 IRL510S is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0Win a typical surface mount application.

The features of IRL510S can be summarized as (1)surface mount; (2)available in tape & reel; (3)dynamic dv/dt rating; (4)repetitive avalanche rated; (5)logic -level gate drive; (6)RDS(on) specified at VGS=4V & 5V; (7)175°C operating temperature.

The absolute maximum ratings of IRL510S are (1)ID @, TC = 25°C, GS@5.0V continuous drain current: 5.6A; (2)ID @ TC = 100°C, GS@5.0V continuous drain current: 4.0A; (3)pulsed drain current IDM: 18A; (4)PD @ TC = 25°C Max. power dissipation: 43W; (5)linear derating factor: 1.2 W/°C; (6)VGS gate-to-source voltage: ±10V; (7)EAS single pulse avalanche energy: 100 mJ; (8)IAR avalanche current: 5.6A; (9)EAR repetitive avalanche energy: 4.3mJ; (10)dv/dt peak diode recovery dv/dt: 5.5V/ns; (11)TJ operating junction: -55 to 175°C; (12)TJ TSTG storage temperature range: -55 to 175°C; (13)lead temperature: 300 (0.063 in. (1.6mm) from case for 10s); (14)PD @ TA= 25°C Max. power dissipation: 3.7W.