IRL3803VSPBF

MOSFET MOSFT 30V 140A 5.5mOhm 50.7nC LogLv

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SeekIC No. : 00149503 Detail

IRL3803VSPBF: MOSFET MOSFT 30V 140A 5.5mOhm 50.7nC LogLv

floor Price/Ceiling Price

US $ .92~2.18 / Piece | Get Latest Price
Part Number:
IRL3803VSPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.18
  • $1.42
  • $.93
  • $.92
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 16 V Continuous Drain Current : 140 A
Resistance Drain-Source RDS (on) : 7.5 mOhms Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Package / Case : D2PAK
Packaging : Tube
Gate-Source Breakdown Voltage : 16 V
Resistance Drain-Source RDS (on) : 7.5 mOhms
Continuous Drain Current : 140 A


Features:

` Logic-Level Gate Drive
` Advanced Process Technology
` Surface Mount (IRL3803VS)
` Low-profile through-hole (IRL3803VL)
` 175 Operating Temperature
` Fast Switching
` Fully Avalanche Rated
` Lead-Free



Specifications

  Parameter
Max.
Units
ID @ TC = 25 Continuous Drain Current,VGS @ 10V
140
A
ID @ TC = 100 Continuous Drain Current,VGS @ 10V
110
IDM Pulsed Drain Current
470
PD @ TC = 25 Power Dissipation
3.8
W
PD @ TC = 25 Power Dissipation
200
  Linear Derating Factor
1.4
W/
VGS Gate-to-Source Voltage
±16
V
IAR Avalanche Current
71
A
EAR Repetitive Avalanche Energy
20
mJ
dv/dt Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to 175
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )



Description

Advanced HEXFET® Power MOSFETs from International Rectifier IRL3803VSPbF utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL3803VSPbF design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRL3803VSPbF is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL3803VSPbF provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak IRL3803VSPbF is suitable for high current applications because of its low internal connectionresistance and can dissipate up to 2.0W in a typical surface mount application.




Parameters:

Technical/Catalog InformationIRL3803VSPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C140A
Rds On (Max) @ Id, Vgs5.5 mOhm @ 71A, 10V
Input Capacitance (Ciss) @ Vds 3720pF @ 25V
Power - Max3.8W
PackagingTube
Gate Charge (Qg) @ Vgs76nC @ 4.5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRL3803VSPBF
IRL3803VSPBF



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