MOSFET N-CH 20V 61A TO-262
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Series: | HEXFET® | Manufacturer: | Vishay Siliconix | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 20V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 61A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 37A, 7V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 700mV @ 250µA | Gate Charge (Qg) @ Vgs: | 58nC @ 4.5V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 2500pF @ 15V | ||
Power - Max: | 89W | Mounting Type: | Through Hole | ||
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA | Supplier Device Package: | TO-262-3 |