IRL3102L

MOSFET N-CH 20V 61A TO-262

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SeekIC No. : 003431878 Detail

IRL3102L: MOSFET N-CH 20V 61A TO-262

floor Price/Ceiling Price

US $ .89~.89 / Piece | Get Latest Price
Part Number:
IRL3102L
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~350
  • Unit Price
  • $.89
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Quick Details

Series: HEXFET® Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 61A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 13 mOhm @ 37A, 7V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) @ Vgs: 58nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2500pF @ 15V
Power - Max: 89W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262-3    

Description

Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 20V
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 700mV @ 250µA
Power - Max: 89W
Gate Charge (Qg) @ Vgs: 58nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C: 61A
Rds On (Max) @ Id, Vgs: 13 mOhm @ 37A, 7V
Input Capacitance (Ciss) @ Vds: 2500pF @ 15V


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