IRL3803

MOSFET N-CH 30V 140A TO-220AB

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IRL3803 Picture
SeekIC No. : 003433386 Detail

IRL3803: MOSFET N-CH 30V 140A TO-220AB

floor Price/Ceiling Price

Part Number:
IRL3803
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 140A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 6 mOhm @ 71A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 140nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 5000pF @ 25V
Power - Max: 200W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220AB    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Input Capacitance (Ciss) @ Vds: 5000pF @ 25V
Power - Max: 200W
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 140A
Rds On (Max) @ Id, Vgs: 6 mOhm @ 71A, 10V
Gate Charge (Qg) @ Vgs: 140nC @ 4.5V


Description

The IRL3803 is designed as one kind of HEXFET power MOSFET from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistace per silicon area.This benefit,combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know for,provides the designer with an extermely efficient device for use in a wide variety of applicatons.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.Features of the IRL3803 are:(1)logic-level gate drive;(2)advanced process technology;(3)ultra low on-resistance;(4)dynamic dv/dt rating;(5)fast switching;(6)fully avalanche rated.

The absolute maximum ratings of the IRL3803 can be summarized as:(1)continuous drain current,VGS @ 10V (Id @ Tc=25):140 A;(2)continuous drain current,VGS @ 10V (Id @ Tc=100):98 A;(3)pulsed drain current:470 A;(4)power dissipation:200 W;(5)linear derating factor:1.3 W/;(6)gate-to-source voltage:+/-16 V;(7)single pulse avalanche energy:610 mJ;(8)avalanche current:71 A;(9)repetitive avalanche energy:20 mJ;(10)peak diode recovery dv/dt:5.0 V/ns;(11)operating junction and storage temperature range:-55 to +175;(12)soldering temperature for 10 seconds:300 (1.6mm from case).If you want to know more information such as the electrical characteristics about the IRL3803,please download the datasheet in www.seekic.com or www.chinaicmart.com .






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