IRL3716S

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Series: HEXFET®
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Manufacturer: International Rectifier
Power - Max: 210W
Current - Continuous Drain (Id) @ 25° C: 180A
Gate Charge (Qg) @ Vgs: 79nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4 mOhm @ 90A, 10V
Input Capacitance (Ciss) @ Vds: 5090pF @ 10V


Features:

· Ultra-Low Gate Impedance
· Very Low RDS(on) at 4.5V VGS
· Fully Characterized Avalanche Voltage and Current


Application

· High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
· High Frequency Buck Converters for Computer Processor Power
· Active Oring


Specifications

Symbol	Parameter	Max.	Unit
VDS	Drain-Source Voltage	20	V
VGS	Gate-to-Source Voltage	± 20	V
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	180	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	130
IDM	Pulsed Drain Current	720
PD @TC = 25°C	Maximum Power Dissipation	210	W
PD @TC = 100°C	Maximum Power Dissipation	100	W
	Linear Derating Factor	1.4	W/°C
TJ , TSTG	Junction and Storage Temperature Range	-55 to + 175	°C