MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 180 A | ||
Resistance Drain-Source RDS (on) : | 4.8 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Symbol | Parameter | Max. | Units |
VDS | Drain-Source Voltage | 20 | V |
VGS | Gate-to-Source Voltage | ± 20 | V |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 180 | A |
ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 130 | |
IDM | Pulsed Drain Current | 720 | |
PD @TC = 25 | Maximum Power Dissipation | 210 | W |
PD @TC = 100 | Maximum Power Dissipation | 100 | W |
Linear Derating Factor | 1.4 | W/ | |
TJ , TSTG | Junction and Storage Temperature Range | -55 to + 175 |
Technical/Catalog Information | IRL3716PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 180A |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 90A, 10V |
Input Capacitance (Ciss) @ Vds | 5090pF @ 10V |
Power - Max | 210W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 79nC @ 4.5V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRL3716PBF IRL3716PBF |