IRL3716

MOSFET N-CH 20V 180A TO-220AB

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SeekIC No. : 003433555 Detail

IRL3716: MOSFET N-CH 20V 180A TO-220AB

floor Price/Ceiling Price

US $ .95~.95 / Piece | Get Latest Price
Part Number:
IRL3716
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~250
  • Unit Price
  • $.95
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 180A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 4 mOhm @ 90A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) @ Vgs: 79nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 5090pF @ 10V
Power - Max: 210W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220AB    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Drain to Source Voltage (Vdss): 20V
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Manufacturer: International Rectifier
Power - Max: 210W
Current - Continuous Drain (Id) @ 25° C: 180A
Gate Charge (Qg) @ Vgs: 79nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4 mOhm @ 90A, 10V
Input Capacitance (Ciss) @ Vds: 5090pF @ 10V


Features:

· Ultra-Low Gate Impedance
· Very Low RDS(on) at 4.5V VGS
· Fully Characterized Avalanche Voltage and Current



Application

· High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
· High Frequency Buck Converters for Computer Processor Power
· Active Oring



Specifications

Symbol
Parameter
Max.
Unit
VDS
Drain-Source Voltage
20
V
VGS
Gate-to-Source Voltage
± 20
V
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
180
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
130
IDM
Pulsed Drain Current
720
PD @TC = 25°C
Maximum Power Dissipation
210
W
PD @TC = 100°C
Maximum Power Dissipation
100
W
Linear Derating Factor
1.4
W/°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 175
°C



Parameters:

Technical/Catalog InformationIRL3716
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C180A
Rds On (Max) @ Id, Vgs4 mOhm @ 90A, 10V
Input Capacitance (Ciss) @ Vds 5090pF @ 10V
Power - Max210W
PackagingTube
Gate Charge (Qg) @ Vgs79nC @ 4.5V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRL3716
IRL3716



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