MOSFET N-CH 20V 180A TO-220AB
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Series: | HEXFET® | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 20V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 180A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 90A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 3V @ 250µA | Gate Charge (Qg) @ Vgs: | 79nC @ 4.5V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 5090pF @ 10V | ||
Power - Max: | 210W | Mounting Type: | Through Hole | ||
Package / Case: | TO-220-3 | Supplier Device Package: | TO-220AB |
Symbol |
Parameter |
Max. |
Unit |
VDS |
Drain-Source Voltage |
20 |
V |
VGS |
Gate-to-Source Voltage |
± 20 |
V |
ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
180 |
A |
ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
130 | |
IDM |
Pulsed Drain Current |
720 | |
PD @TC = 25°C |
Maximum Power Dissipation |
210 |
W |
PD @TC = 100°C |
Maximum Power Dissipation |
100 |
W |
Linear Derating Factor |
1.4 |
W/°C | |
TJ , TSTG |
Junction and Storage Temperature Range |
-55 to + 175 |
°C |
Technical/Catalog Information | IRL3716 |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 180A |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 90A, 10V |
Input Capacitance (Ciss) @ Vds | 5090pF @ 10V |
Power - Max | 210W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 79nC @ 4.5V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Logic Level Gate |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRL3716 IRL3716 |