IRL3715ZS

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Gate Charge (Qg) @ Vgs: 11nC @ 4.5V
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 50A
Packaging: Tube
Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Power - Max: 45W
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 870pF @ 10V
Vgs(th) (Max) @ Id: 2.55V @ 250µA


Features:

· Low RDS(on) at 4.5V VGS
·Ultra-Low Gate Impedance
·Fully Characterized Avalanche Voltage and Current


Application

· High Frequency Synchronous Buck Converters for Computer Processor Power


Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	20	V
VGS	Gate-to-Source Voltage	± 20
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	50	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	36
IDM	Pulsed Drain Current	200
PD @TC = 25°C	Maximum Power Dissipation	45	W
PD @TC = 100°C	Maximum Power Dissipation	36
	Linear Derating Factor	0.30	W/°C
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting Torque, 6-32 or M3 screw	300 (1.6mm from case)

Description