IRL3714ZS

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 36A
Packaging: TubeAlternate Packaging
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Power - Max: 35W
Gate Charge (Qg) @ Vgs: 7.2nC @ 4.5V
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds: 550pF @ 10V


Features:

 Low R_DS(on) at 4.5V V_GS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage and Current


Application

 High Frequency Synchronous Buck Converters for Computer Processor Power


Specifications

Symbol	Parameter	Max.	Units
VDS	Drain-Source Voltage	30	V
VGS	Gate-to-Source Voltage	±20
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	36	A
ID @ TC= 100	Continuous Drain Current, VGS @ 10V	25
IDM	Pulsed Drain Current	140
PD @TC = 25	Power Dissipation	35	W
PD @TC = 100	Power Dissipation	18
	Linear Derating Factor	0.23	W/
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)