IRL3714ZLPBF

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 20V
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 36A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Power - Max: 35W
Gate Charge (Qg) @ Vgs: 7.2nC @ 4.5V
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds: 550pF @ 10V


Parameters:

Technical/Catalog Information	IRL3714ZLPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	36A
Rds On (Max) @ Id, Vgs	16 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	550pF @ 10V
Power - Max	35W
Packaging	Tube
Gate Charge (Qg) @ Vgs	7.2nC @ 4.5V
Package / Case	TO-262-3 (Straight Leads)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRL3714ZLPBF IRL3714ZLPBF