IRL3714S

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 9.7nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C: 36A
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 670pF @ 10V
Power - Max: 47W
Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V


Features:

 Ultra-Low Gate Impedance
 Very Low R_DS(on) at 4.5V V_GS
 Fully Characterized Avalanche Voltage and Current


Application

 High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
 High Frequency Buck Converters for Computer Processor Power

Specifications

V_DS Drain-Source Voltage ...........................................................20 V
V_GS Gate-to-Source Voltage ....................................................± 20 V
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V ...............36 A
I_D @ T_C = 70°C Continuous Drain Current, V_GS @ 10V ...............31 A
I_DM Pulsed Drain Current ..........................................................140 A
P_D @T_C = 25°C Maximum Power Dissipation ..............................47 W
P_D @T_C = 70°C Maximum Power Dissipation ..............................33 W
Linear Derating Factor .......................................................0.31 W/°C
T_J , T_STG Junction and Storage Temperature Range ..-55 to + 175 °C